Current Issue : April-June Volume : 2022 Issue Number : 2 Articles : 5 Articles
Random Pulse Width Modulation (RPWM) allows controlling the switching signal of power converters in order to reduce the harmonic peaks by spreading the noise spectrum. Currently, many manufacturers of power converters are deploying this modulation scheme in order to comply with Electromagnetic Compatibility (EMC) test requirements. However, when the converters coexist with Power Line Communication (PLC) systems, such as in Smart Grid (SG) applications, resorting to RPWM needs further investigations since it potentially affects the communication channel by increasing the bit error rate. This possible detrimental effect is investigated in this work, by considering a PLC system for automatic meter reading (AMR) implemented in a SG application. To this end, the model of a complete PLC system is implemented in SIMULINK, and Quadrature Phase Shift Keying (QPSK) modulation is used to model the PLC modems in the communication channel. Results show that, even if the deployment of RPWM techniques may lead to an appreciable reduction/spreading of the peaks in the noise spectrum, it may also lead to an increase of the bit error rate on the PLC system....
In Z-source topologies, a high-amplitude common-mode voltage can occur when shootthrough states are inserted. In this study, a new space vector pulse-width modulation for an active quasi-Z-source topology is proposed to operate at a high modulation index and reduce the commonmode voltage to one-third of the DC-link voltage. Moreover, the quality of the output voltage is improved by operation with a high modulation index and decreasing the switching loss of the Hbridge switches. The detailed operating principles of the active quasi-Z-source topology using the proposed space vector modulation (SVM) method are presented. A simulation model was built, and an experimental prototype was verified to correct the theoretical analysis....
Due to the natural low permittivity in vacuum, the voltage stresses on compensation capacitors and inductances in the capacitive power transfer (CPT) system are very high, which brings challenges to the design of CPT systems in practical applications. This paper used a threecell structure analysis method for the CPT system to determine the optimal load for achieving the maximum power transfer or maximum efficiency transfer, through considering the maximum withstand voltage of the capacitor or inductor. A shielding layer with edge bending is designed to reduce the range of dangerous areas markedly. The simulation and experimental results verified the above conclusion. The prototype of the CPT system with transfer 3.1 kW across a 13 cm air gap and DC-DC transfer efficiency of 91.4% is built....
The three-phase Y-connected bridgeless rectifier is essentially a nonlinear system, and it is difficult to obtain superior dynamic performance under the action of traditional linear controller. Under the condition of unbalanced power grids, this paper has established a mathematical model based on Euler–Lagrange (EL) equations with line voltage and line current as state variables. Furthermore, it then designed a passivity-based controller in inner current loop based on the mathematical model. The hybrid nonlinear control strategy consisting of active disturbance rejection controller (ADRC) in the outer voltage loop and passivity-based controller (PBC) in the inner current loop is adopted to control the system, which does not need to consider the positive and negative sequence components. The control structure is simple and can improve the steady-state accuracy, dynamic performance and anti-interference ability. The feasibility of the proposed control strategy is verified by computer simulation, which has a guiding significance for the application of three-phase bridgeless rectifier in practical engineering....
In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 A/mm (at VR = 200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations....
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